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| PROFET(R) Target Data Sheet BTS660P Smart Highside High Current Power Switch Features * Overload protection * Current limitation * Short circuit protection * Overtemperature protection * Overvoltage protection (including load dump) * Clamp of negative voltage at output * Fast deenergizing of inductive loads 1) * Low ohmic inverse current operation * Reverse battery protection * Diagnostic feedback with load current sense * Open load detection via current sense * Loss of Vbb protection2) * Electrostatic discharge (ESD) protection Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio Vbb(AZ) 70 V VON(CL) 60 V Vbb(on) 5.0 ... 55 V RON 9 m IL(ISO) 44 A IL(SCp) 145 A IL : IIS 13 000 TO-220AB/7 * Power switch with current sense diagnostic feedback for up to 48 V DC grounded loads * Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads * Replaces electromechanical relays, fuses and discrete circuits Application 7 1 7 Standard SMD 1 General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS(R) chip on chip technology. Fully protected by embedded protection functions. 4 & Tab R + V bb bb Voltage source Overvoltage protection Current limit Gate protection Voltage sensor Charge pump Level shifter Rectifier Limit for unclamped ind. loads Output Voltage detection Current Sense OUT 1,2,6,7 IL 3 IN Load ESD Logic I IN Temperature sensor IS I IS PROFET (R) Load GND VIN V IS Logic GND 5 R IS 1 ) 2) With additional external diode. Additional external diode required for energized inductive loads (see page 9). Semiconductor Group Page 1 of 16 1998-Dec-21 Target Data Sheet BTS660P Pin 1 2 3 4 Symbol OUT OUT IN Vbb O O I Function Output to the load. The pins 1,2,6 and 7 must be shorted with each other 3 especially in high current applications! ) Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) Input, activates the power switch in case of short to ground Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the Vbb connection 4 instead of this pin ). Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 7) Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) + 5 6 7 IS OUT OUT S O O Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection, resistive load or L < tbd H Tj,start =-40 ...+150C: Load current (short circuit current, see page 5) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI5) = 2 , RL = 0.23 , td = 200 ms, IN, IS = open or grounded Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const., IL = 20 A, ZL = tbd mH, 0 , see diagrams on page 10 Electrostatic discharge capability (ESD) Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 k Symbol Vbb Vbb Values 60 55 self-limited 80 -40 ...+150 -55 ...+150 170 tbd (>1.2) 2.0 +15 , -250 +15 , -250 Unit V V A V C W J kV mA IL VLoad dump6) Tj Tstg Ptot EAS VESD IIN IIS Current through input pin (DC) Current through current sense status pin (DC) see internal circuit diagrams on page 7 and 8 3) 4) 5) 6) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Otherwise add up to 0.7 m (depending on used length of the pin) to the RON if the pin is used instead of the tab. RI = internal resistance of the load dump test pulse generator. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Semiconductor Group Page 2 1998-Dec-21 Target Data Sheet BTS660P Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min --7 chip - case: RthJC ) junction - ambient (free air): RthJA SMD version, device on PCB8): Values typ max -- 0.75 60 -33 Unit K/W Electrical Characteristics Parameter and Conditions at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,2,6,7, see IL = 20 A, Tj = 25 C: RON measurement circuit page 7) VIN = 0, IL = 20 A, Tj = 150 C: IL = 80 A, Tj = 150 C: Nominal load current9) (Tab to pins 1,2,6,7) ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 C 10) Nominal load current9), device on PCB8)) TA = 85 C, Tj 150 C VON 0.5 V, Maximum load current in resistive range (Tab to pins 1,2,6,7) VON = 1.8 V, Tc = 25 C: see diagram on page 12 VON = 1.8 V, Tc = 150 C: 11) Turn-on time IIN to 90% VOUT: Turn-off time IIN to 10% VOUT: RL = 1 , Tj =-40...+150C Slew rate on 11) (10 to 30% VOUT ) RL = 1 Slew rate off 11) (70 to 40% VOUT ) RL = 1 -- 7.2 14.6 -44 9 17 17 -- m IL(ISO) 38 A IL(NOM) IL(Max) ton toff dV/dton -dV/dtoff 9.9 185 105 80 30 --- 11.1 ----0.8 0.7 ---320 110 --- A A s V/s V/s 7) 8 Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included! Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. 9) Not tested, specified by design. 10) TJ is about 105C under these conditions. 11) See timing diagram on page 14. ) Semiconductor Group Page 3 1998-Dec-21 Target Data Sheet BTS660P Inverse Load Current Operation On-state resistance (Pins 1,2,6,7 to pin 4) VbIN = 12 V, IL = - 20 A Tj = 25 C: RON(inv) see diagram on page 10 Tj = 150 C: Nominal inverse load current (Pins 1,2,6,7 to Tab) IL(inv) VON = -0.5 V, Tc = 85 C10 Drain-source diode voltage (Vout > Vbb) -VON IL = - 20 A, IIN = 0, Tj = +150C Operating Parameters Operating voltage (VIN = 0) 12) Undervoltage shutdown 13) Undervoltage start of charge pump see diagram page 15 Overvoltage protection14) Tj =-40C: Ibb = 15 mA Tj = 25...+150C: Standby current Tj =-40...+25C: IIN = 0 Tj = 150C: -50 -- 7.2 14.6 60 tbd 9 17 --- m A mV Vbb(on) VbIN(u) VbIN(ucp) VbIN(Z) Ibb(off) 5.0 --68 70 --- -3.5 5 -74 --- 55 -6.5 --25 50 V V V V A ) For all voltages 0 ... 55 V the device is fully protected against overtemperature and short circuit. ) V = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V bIN (typ.) the charge pump is not active and VOUT Vbb - 3 V. 14) See also VON(CL) in circuit diagram on page 9. 12 13 Semiconductor Group Page 4 1998-Dec-21 Target Data Sheet BTS660P Parameter and Conditions at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions Short circuit current limit (Tab to pins 1,2,6,7) VON = 12 V, time until shutdown max. 300 s Tc =-40C: see diagram page 8 Tc =25C: Tc =+150C: Short circuit shutdown delay after input current positive slope, VON > VON(SC) min. value valid only if input "off-signal" time exceeds 30 s IL(SCpeak) IL(SC) IL(SC) td(SC) -tbd tbd 80 --- 170 145 120 -15 17 -tbd tbd 300 --- A s V Output clamp 15) (inductive load switch off) (typ. IIS = -120A) IL= 40 mA: -VOUT(CL) IL= 20 A: see diagram Ind. and overvolt. output clamp page 8 Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. overvoltage) IL= 40 mA Short circuit shutdown detection voltage (pin 4 to pins 1,2,6,7) VON(CL) VON(SC) Tjt Tjt 60 -150 -- 64 6 -10 68 ---- V V C K Thermal overload trip temperature Thermal hysteresis Reverse Battery Reverse battery voltage 16) -Vbb On-state resistance (Pins 1,2,6,7 to pin 4) Tj = 25 C: RON(rev) Vbb = -12V, VIN = 0, IL = - 20 A, RIS = 1 k Tj = 150 C: Integrated resistor in Vbb line ---- -8.8 -tbd 42 10.5 20 -- V m Rbb ) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off. 16) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (I IN = I IS = 0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 9. 15 Semiconductor Group Page 5 1998-Dec-21 Target Data Sheet BTS660P Parameter and Conditions at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Diagnostic Characteristics Current sense ratio, static on-condition, kILIS = IL : IIS, VON < 1.5 V17), VIS IL = 80 A,Tj =-40C: kILIS Tj =25C: Tj =150C: IL = 20 A,Tj =-40C: Tj =25C: Tj =150C: IL = 10 A,Tj =-40C: Tj =25C: Tj =150C: IL = 4 A,Tj =-40C: Tj =25C: Tj =150C: IIS,lim IIN = 0, IIS=0 (e.g. during deenergizing of inductive loads): Sense current saturation Current sense leakage current 11400 11400 11800 11000 11000 11500 10500 10500 11000 10500 10500 11000 -6.5 --68 70 ---- 13 000 13 000 13 000 13 000 13 000 13 000 13 000 13 000 13 000 13 000 13 000 13 000 ---2 -74 tbd tbd tbd 15400 14600 14200 16000 15000 14500 17000 15500 15000 19000 17000 16000 --0.5 ---500 500 500 mA A V IIN = 0, VIS = 0: IIS(LL) VIN = 0, VIS = 0, IL 0: IIS(LH) Current sense overvoltage protection Tj =-40C: VbIS(Z) Ibb = 15 mA Tj = 25...+150C: 18) Current sense settling time after positive input IL = 0 / 20 A: tson(IS) slope (90% of IIS static) 18) after negative input Current sense settling time slope (10% of IIS static) IL = 20 / 0 A: tsoff(IS) 18) after change of load Current sense settling time IL = 15 / 20 A: tslc(IS) current (60% to 90%) Input Input and operating current (see diagram page 13) IIN(on) IN grounded (VIN = 0) s s s --- 1 -- 2 40 mA A Input current for turn-off19) IIN(off) 17) If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see IIS,lim . 18) Not tested, specified by design. 19) We recommend the resistance between IN and GND to be less than 0.5 k for turn-on and more than 500k for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Semiconductor Group Page 6 1998-Dec-21 Target Data Sheet BTS660P Truth Table Input current level Normal operation Very high load current Currentlimitation Short circuit to GND Overtemperature Short circuit to Vbb Open load Negative output voltage clamp Inverse load current L H H H L H L H L H L H L L H Output level L H H H L L L L H H 21 Z) H L H H Current Sense IIS 0 nominal IIS, lim 0 0 0 0 0 0 20 L = "Low" Level H = "High" Level Overtemperature reset by cooling: Tj < Tjt (see diagram on page 15) Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14) Terms I bb VbIN 4 Vbb IL V bb RIN V IN RON measurement layout VON l 5.5mm 3 IN PROFET IS 5 OUT 1,2,6,7 Vbb force I IS DS R IS VOUT I IN VbIS VIS Out Force Sense contacts contacts (both out pins parallel) Typical RON for SMD version is about 0.2 m less than straight leads due to l 2 mm Two or more devices can easily be connected in parallel to increase load current capability. 20 21 ) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS. ) Power Transistor "OFF", potential defined by external impedance. Semiconductor Group Page 7 1998-Dec-21 Target Data Sheet BTS660P Input circuit (ESD protection) V bb Current sense status output Vbb R bb ZD IS V V V bIN ZD R bb Z,IS Z,IN IN I IN I IS R IS VIS V IN When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. VZ,IN = 74 V (typ). Short circuit detection Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...300 s). + Vbb VZ,IS = 74 V (typ.), RIS = 1 k nominal (or 1 k /n, if n devices are connected in parallel). IS = IL/kilis can be driven only by the internal circuit as long as Vout - VIS > 5 V. If you want measure load currents up to IL(M), RIS Vbb - 5 V should be less than . IL(M) / Kilis Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. Inductive and overvoltage output clamp + Vbb VZ1 VON VON VZG OUT OUT Logic unit Short circuit detection DS IS PROFET VOUT VON is clamped to VON(Cl) = 62 V typ. At inductive load switch-off without DS, VOUT is clamped to VOUT(CL) = -15 V typ. via VZG. With DS, VOUT is clamped to Vbb VON(CL) via VZ1. Using DS gives faster deenergizing of the inductive load, but higher peak power dissipation in the PROFET. Semiconductor Group Page 8 1998-Dec-21 Target Data Sheet BTS660P Overvoltage protection of logic part + Vbb V R IN Z,IN Vbb disconnect with energized inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 70 V or VZb < 42 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. V Z,IS R bb IN Logic V OUT IS Version a: V PROFET RV Signal GND bb IN V R IS V Z,VIS bb OUT PROFET Rbb = 120 typ., VZ,IN = VZ,IS = 74 V typ., RIS = 1 k nominal. Note that when overvoltage exceeds 79 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. IS V ZL Reverse battery protection - Vbb Rbb Version b: V IN OUT bb IN Vbb PROFET OUT RIN Logic IS Power Transistor IS DS RL RV Power GND V Zb D Signal GND RIS RV 1 k, RIS = 1 k nominal. Add RIN for reverse battery protection in applications with Vbb above 1 1 1 16V16); recommended value: + + = RIN RIS RV 0.1A 1 0.1A if DS is not used (or = if DS RIN |Vbb| - 12V |Vbb| - 12V is used). To minimize power dissipation at reverse battery operation, the summarized current into the IN and IS pin should be about 120mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS and RV. Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. Version c: Sometimes a neccessary voltage clamp is given by non inductive loads RL connected to the same switch and eliminates the need of clamping circuit: V bb IN Vbb PROFET OUT RL IS Semiconductor Group Page 9 1998-Dec-21 Target Data Sheet BTS660P Inverse load current operation Energy stored in load inductance: Vbb EL = 1/2*L*I L - IL 2 V bb + IN While demagnetizing load inductance, the energy dissipated in PROFET is PROFET IS OUT EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, V OUT + - with an approximate solution for RL > 0 : V IN V IS IIS - EAS= R IS IL* L IL*RL (Vbb + |VOUT(CL)|) ln (1+ |V ) 2*RL OUT(CL)| The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. If the device is switched on (VIN = 0), this power dissipation is decreased to the much lower value RON(INV) * I2 (specifications see page 4). Note: Temperature protection during inverse load current operation is not possible! Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150C, Vbb = 12 V, RL = 0 L [mH] 10000 1000 Inductive load switch-off energy dissipation E bb E AS V V bb ELoad bb i L(t) IN PROFET OUT EL 100 10 IS I ZL { L IN RIS RL ER 1 0 2.5 5 7.5 10 IL [A] Semiconductor Group Page 10 1998-Dec-21 Target Data Sheet BTS660P Options Overview Type BTS 660P 560 X X X X 23 X) X X X23) X X Overtemperature protection with hysteresis Tj >150 C, latch function22) Tj >150 C, with auto-restart on cooling Short circuit to GND protection switches off when VON>6 V typ. (when first turned on after approx. 180 s) Overvoltage shutdown Output negative voltage transient limit to Vbb - VON(CL) to VOUT = -15 V typ ) Latch except when V -V bb OUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch between turn on and td(SC). 23) Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output. 22 Semiconductor Group Page 11 1998-Dec-21 Target Data Sheet BTS660P Characteristics Current sense versus load current: IIS = f(IL), TJ= -40 ... +150 C IIS [mA] 5 Typ. current limitation characteristic IL = f (VON, Tj ) IL [A] 400 350 300 250 4.5 4 3.5 3 2.5 2 1.5 min max VON>VON(SC) only for t < td(SC) (otherwise immediate shutdown) 200 150 100 Tj = -40C 85C 25C 150C 1 0.5 0 0 20 40 60 80 IL [A] 50 0 0 VON(FB)5 AyqA7hpx 10 15 20 VON [V] In case of VON > VON(SC) (typ. 6 V) the device will be switched off by internal short circuit detection. Typ. on-state resistance RON = f (Vbb, Tj ); IL = 20 A; VIN = 0 Current sense ratio: KILIS = f(IL) kilis 20000 RON [mOhm] 18000 18 16 14 12 10 8 static dynamic 16000 max 14000 TJ=-40C 25C 150C Tj = 150C typ, TJ=-40 ... +150C 12000 85C 25C -40C 150C min -40 ... 25C 10000 0 20 40 60 80 IL [A] 6 4 0 5 10 15 40 Vbb [V] Semiconductor Group Page 12 1998-Dec-21 Target Data Sheet BTS660P Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN IIN [mA] 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 VbIN [V] Semiconductor Group Page 13 1998-Dec-21 Target Data Sheet BTS660P Timing diagrams Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2b: Switching an inductive load: IIN IIN VOUT 90% t on dV/dton 10% t off dV/dtoff VOUT IL tslc(IS) t slc(IS) IL Load 1 Load 2 IIS t t IIS tson(IS) t soff(IS) The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 3a: Short circuit: shut down by short circuit detection, reset by IIN = 0. Figure 2a: Switching motors and lamps: IIN IIN IL IL(SCp) VOUT td(SC) IIL IIS VOUT>>0 VOUT=0 t IIS t Shut down remains latched until next reset via input. Sense current saturation can occur at very high inrush currents (see IIS,lim on page 6). Semiconductor Group Page 14 1998-Dec-21 Target Data Sheet BTS660P Figure 4a: Overtemperature Reset if Tj IIS VOUT Auto Restart Tj t Figure 6a: Undervoltage restart of charge pump, overvoltage clamp VOUT VIN = 0 VON(CL) 6 4 dynamic, short Undervoltage not below VbIN(u) 2 IIN = 0 V ON(CL) 0 0 V bIN(u) 4 V bIN(ucp) Semiconductor Group Page 15 1998-Dec-21 Target Data Sheet BTS660P Package and Ordering Code All dimensions in mm Standard TO-220AB/7 BTS660P Ordering code Q67060-S6308-A2 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, D-81541 Munchen (c) Siemens AG 1998. All Rights Reserved Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing: Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be 24 expressly authorised for such purpose! Critical components ) of the Semiconductor Group of Siemens AG, may only be used in life 25 supporting devices or systems ) with the express written approval of the Semiconductor Group of Siemens AG. SMD TO 220AB/7, Opt. E3180 Ordering code BTS660P E3180A T&R: Q67060-S6308-A4 Footprint: on request 24) 25) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered. Semiconductor Group Page 16 1998-Dec-21 |
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